| PART |
Description |
Maker |
| VG26VS17400FJ VG26S17400FJ-6 VG26V17400FJ-6 VG26V1 |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| VG26S17400FJ-5 VG26S17400FJ-6 VG26V17400FJ-5 VG26V |
4,194,304 x 4 - Bit CMOS FPM Dynamic RAM
4,194,304 x 4 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位（262,144字由16位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC514100AJ TC514100AP TC514100ASJ TC514100AZ-60 |
4,194,304 WORD x BIT DYNAMIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| VG26S17405J-5 VG26S17405J-6 VG26V17405J-5 VG26V174 |
4,194,304 x 4 - Bit CMOS Dynamic RAM
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor
|
| MSM51V16400F-70TS-K MSM51V16400F MSM51V16400F-50TS |
4,194,304-Word × 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
4,194,304-Word 】 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
| 5164160A |
4,194,304-Word ′ 4-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| 51W1616B |
4,194,304-Word ′ 1-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
| MSM519200-80TS-K MSM519200 MSM519200-60 MSM519200- |
4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
| MSM5116400A |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
